Potential of low-voltage organic transistors with high on-state drain current for temperature sensor development

A High-Temperature, High-Voltage SOI Gate Driver IC with High Output Current and On-Chip Low-Power Temperature Sensor

High-temperature power conversion modules (DC-DC converters, inverters, etc.) have enormous potential in extreme environment applications, including automotive, aerospace, geothermal, nuclear, and well logging. Power-to-volume and power-to-weight ratios of these modules can be significantly improved by employing Silicon Carbide (SiC) based power switches (MOSFET or JFET). Wide bandgap material ...

Flexible low-voltage organic transistors based on a novel, high-mobility organic semiconductor

Organic thin-film transistors (TFTs) are of interest for a variety of large-area electronics applications, such as flexible active-matrix displays and conformable sensor arrays [1]. Among the challenges in the development of high-performance organic TFTs, especially on flexible polymeric substrates, is to realize organic TFTs that simultaneously provide a large field-effect mobility, a large on...

High-temperature performance of MoS2 thin-film transistors: Direct current and pulse current-voltage characteristics

Articles you may be interested in Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices Appl. Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2 field effect transistors Appl. Fabrication of stretchable MoS2 thin-film transistors using elastic ion-gel gate dielectrics Appl. High-performance organic thi...

Temperature sensor solutions for low-voltage systems

Corrigendum: Improved Drain Current Saturation and Voltage Gain in Graphene–on–Silicon Field Effect Transistors

Graphene devices for radio frequency (RF) applications are of great interest due to their excellent carrier mobility and saturation velocity. However, the insufficient current saturation in graphene field effect transistors (FETs) is a barrier preventing enhancements of the maximum oscillation frequency and voltage gain, both of which should be improved for RF transistors. Achieving a high outp...